Nano-Scale Electron Lithography using Radioisotope Thin Films
- 詳細技術說明
- Cornell researchers have invented a novel lithography system for achieving feature sizes down to 20 nm or less.
- *Abstract
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Cornell researchers have invented a novel lithography system for achieving feature sizes down to 20 nm or less. The new system utilizes energetic electrons spontaneously emitted by a radioisotope thin-film through a stencil-like mask to selectively expose regions of an electron sensitive resist (currently employed in conventional e-beam lithography) on a production wafer.
The mask and production wafer are brought into contact with each other; electrons allowed through the stencil pattern expose the production wafer. While similar to Imprint lithography, the pattern transfer mechanism is not physical contact but exposure to emitted electrons. While similar to e-beam lithography (a serial exposure process), electrons are used to expose the production wafer, but through a parallel process - a distinct time saving advantage.
The radioisotope thin-films contain Nickel-63, a low energy pure beta-emitter material with a half life of 100 years. The beta particles emitted lack sufficient kinetic energy to penetrate the outer dead layer of skin, making them relatively safe to handle. This apparatus and method enable fast and low-cost nano-lithography (20 nm or less feature size) on large area wafers (1-100 cm2) to realize low-cost nano-scale systems.
Potential Applications
- Lithographic process for manufacturing semiconductor circuitry
Advantages
- Small feature size (20 nm or less feature size achievable)
- Compatible with existing CMOS processing (only the lithography step differs)
- Massively parallel electron lithography (vs. serial e-beam process)
- Single-wafer batch sizes economical - no changeover costs
- *Licensing
- Patrick Govangpjg26@cornell.edu(607) 254-2330
- 其他
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Issued US patent 8,658,993 and Chinese Patent ZL200880127187.4
- 國家/地區
- 美國
