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Monolithically Integrated MEMS Devices and Electronics on Silicon Carbide

詳細技術說明
Cornell has successfully built monolithically integrated silicon carbide (SiC) microelectromechanical (MEMS) and electronics.
*Abstract

Leveraging off of the unique material properties of silicon carbide, a platform for the fabrication of monolithically integrated MEMS devices with electronic circuitry is established. Processing steps enable not only the fabrication of the structural and electronic parts individually, but also the monolithic integration of these parts onto the same substrate.

 

The MEMS component is fabricated as part of the SiC electronics process enabling formation of:

  • Bulk micromachined piezoresistive strain sensing regions
  • Surface micromachined electrostatic sensing regions
  • Diaphragm, membrane, and cantilever structures

 

The electronic circuitry includes structures such as:

  • Temperature compensated MOS for signal processing and system control
  • Non-volatile memory for custom, digital programmable logic

Electronic devices which may be formed include P-N and Schottky diodes, MOS and NIM capacitors, N and P-enhanced MOSFETs, and N-type normally on depletion NMOSFETs.

          

Potential Applications

  • High-performance MEMS sensors for harsh environmental conditions in industries such as:
    • Aircraft, spacecraft, automotive, communications, nuclear reactors

   

Advantages

  • Harnesses both SiC's superior electronic and thermomechanical properties
  • Enhanced device performance due to SiC's ability to withstand high temperature, corrosive, and abrasive environments as well as improved electronic power-handling and radiation hardness capability
*Licensing
Martin Teschlmt439@cornell.edu(607) 254-4454
其他
國家/地區
美國

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