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LED Device Structures with Minimized Light Re-Absorption

技術優勢

Reduces light reflections  Increased  light extraction efficiency

技術應用

LED manufacturing     This technology is available for licensing.

詳細技術說明

Researchers at the University of California, Santa Barbara have developed a III-nitride light emitting diode (LED), in which light can be extracted from two surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. This technology minimizes the light re-absorption at the LED active region by eliminating light reflection at the p-type side surface of the LED chip.

*Abstract

A III-nitride light emitting diode (LED), in which light can be extracted from two surfaces of the LED before entering a shaped optical element and subsequently being extracted to air.

*Applications

• LED manufacturing   

*IP Issue Date

Feb 28, 2012

*Principal Investigation

Name: Hirokuni Asamizu

Department:

Name: Steven DenBaars

Department:

Name: Kenji Iso

Department:

Name: Shuji Nakamura

Department:

Name: Makoto Saito

Department:

Name: Hitoshi Sato

Department:

附加資料

Patent Number: US8124991B2
Application Number: US2008181100A
Inventor: Iso, Kenji | Asamizu, Hirokuni | Saito, Makoto | Sato, Hitoshi | DenBaars, Steven P. | Nakamura, Shuji
Priority Date: 26 Jul 2007
Priority Number: US8124991B2
Application Date: 28 Jul 2008
Publication Date: 28 Feb 2012
IPC Current: H01L003300 | H01L003314 | H01L003362
US Class: 257098 | 257091 | 257094 | 257095 | 257096 | 257097 | 257099 | 257103 | 257E23028 | 257E25032 | 257E33054 | 257E33068 | 257E33077 | 438029 | 257E2528
Assignee Applicant: The Regents of the University of California
Title: Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency
Usefulness: Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency
Summary: Used as a light emitting device.
Novelty: Light emitting device comprises a LED structure comprised of an active layer positioned between positive and negative type layers, and a transparent sub-mount material bonded to a first surface of the structure using transparent glue layer

主要類別

光學

細分類別

發光二極管/有機發光二極管

申請號碼

8124991

其他

Background

The LED structure affects how much light is emitted. In order to increase the light output power from the front side of the LED, conventional LEDs are typically equipped with a mirror placed on the backside of the substrate, or a mirror coating on the lead frame. However, this reflected light is re-absorbed by the active region of the LED, because the photon energy of emitted light is almost same as the band-gap energy of the light emitting materials. Due to this re-absorption of the emitted light by the active region, the net output power or the efficiency of the LED is decreased.  Therefore, to achieve highly output power efficiency of the LED, device structures in which re-absorption of the light is minimized are desirable.

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• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
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Tech ID/UC Case

22796/2007-670-0

Related Cases

2007-670-0

國家/地區

美國