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Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD

技術優勢
Large available surface area (samples grown on 2-inch diameter substrates, compared to areas on the order of a few micrometers achieved by prior art) Increased device efficiencies compared to c-plane devices Planar film surface Minimized surface undulations and crystallographic defects
技術應用
High-Performance Nitride-Based Optoelectronics and Semiconductor Devices  This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
詳細技術說明
Researchers at the University of California, Santa Barbara have developed a method for enhancing growth of semipolar (Al,In,Ga,B)N films via metalorganic chemical vapor deposition (MOCVD). This method involves growth of nitride films on the semipolar {11 22} plane to overcome performance limitations associated with the polar c-plane, thus increasing device efficiencies. It yields samples grown on 2-inch diameter substrates, compared with areas of a few micrometers accomplished using existing methods. This method also results in a planar film surface, few surface undulations, and a reduced number of crystallographic defects, all necessary features to support application to state-of-the-art nitride semipolar electronic devices.
*Abstract

A method for enhancing growth of semipolar (Al,In,Ga,B)N films for high-performance nitride-based optoelectronics and semiconductor devices.

*IP Issue Date
Mar 30, 2010
*Principal Investigation

Name: Troy Baker

Department:


Name: Steven DenBaars

Department:


Name: Benjamin Haskell

Department:


Name: Michael Iza

Department:


Name: John Kaeding

Department:


Name: Shuji Nakamura

Department:


Name: Hitoshi Sato

Department:

附加資料
Patent Number: US7687293B2
Application Number: US2007655572A
Inventor: Sato, Hiroshi | Kaeding, John F. | Iza, Michael | Baker, Troy J. | Haskell, Benjamin A. | DenBaars, Steven P. | Nakamura, Shuji
Priority Date: 20 Jan 2006
Priority Number: US7687293B2
Application Date: 19 Jan 2007
Publication Date: 30 Mar 2010
IPC Current: H01L002100 | H01L002900
US Class: 438046 | 257012 | 257013 | 257079 | 257086 | 257094 | 257E21113 | 257E21121 | 257E21463 | 438041 | 438048 | 438481 | 438485
Assignee Applicant: The Regents of the University of California
Title: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Usefulness: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Summary: For growing device-quality planar semipolar nitride semiconductor thin films to form nitride semipolar electronic devices (claimed) e.g. semipolar LEDs.
Novelty: Enhancing growth of device-quality planar semipolar nitride semiconductor thin film involves depositing semipolar nitride semiconductor thin film on nucleation/buffer layer of mixed nitrides of aluminum, indium or gallium containing indium
主要類別
電子
細分類別
半導體
申請號碼
7687293
其他

Background

Existing methods of producing semipolar nitride films are extremely cumbersome and yield areas too small for device fabrication, thus there is a need for a new method that overcomes these obstacles in order to take advantage of the performance benefits of using semipolar nitride films.


Additional Technologies by these Inventors


Tech ID/UC Case

21821/2006-178-0


Related Cases

2006-178-0
國家/地區
美國

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