Thin Film Crystal Growth By Laser Annealing
- 技術優勢
- Improved electrical properties of the resulting TFTDoes not require fabrication of a mask structure over the amorphous siliconProvides control over both the length and directionality of crystal growth
- 技術應用
- Active matrix liquid crystal displaysField emission displaysOrganic light emitting diode displaysOptical sensors
- 詳細技術說明
- None
- *Abstract
-
Flat panel displays such as active matrix liquid crystal displays, field emission displays, organic light emitting diode displays and optical sensors require the fabrication of high quality thin film transistors (TFTs) on transparent substrates. Improving the quality and uniformity of polysilicon TFT performance often requires the formation of high quality polycrystalline silicon films with carefully controlled grain size and location.
To address this need, researchers at the UC Berkeley have developed an improved method and apparatus for producing TFTs with large direction- and location-controlled polysilicon grain growth. This approach uses laser irradiation to control the cooling and solidification processes that determine the resulting crystal structure.
- *IP Issue Date
- Sep 17, 2002
- *Principal Investigation
-
Name: Costas Grigoropoulos
Department:
Name: MUTSUKO HATANO
Department:
Name: MING-HONG LEE
Department:
Name: SEUNG-JAE MOON
Department:
- 附加資料
- Patent Number: US6451631B1
Application Number: US2000637325A
Inventor: Grigoropoulos, Costas P. | Hatano, Mutsuko | Lee, Ming Hong | Moon, Seung Jae
Priority Date: 10 Aug 2000
Priority Number: US6451631B1
Application Date: 10 Aug 2000
Publication Date: 17 Sep 2002
IPC Current: H01L002120 | H01L0021268 | H01L0021336 | H01L0029786
US Class: 438149 | 257E21134 | 438487
Assignee Applicant: Hitachi America Ltd.,Brisbane | The Regents of the University of California,Oakland
Title: Thin film crystal growth by laser annealing
Usefulness: Thin film crystal growth by laser annealing
Summary: For forming thin film crystal for thin film transistor manufacture, for flat panel active matrix liquid crystal display, field emission display, organic EL display. Also for manufacture of photosensor, etc.
Novelty: Thin film crystal formation using laser annealing, e.g. for thin film transistor (TFT) manufacture, involves irradiating amorphous silicon layer with two sets of laser beams to form polycrystalline silicon layer with larger grain size
- 主要類別
- 光學
- 細分類別
- 激光
- 申請號碼
- 6451631
- 其他
-
Related Technologies
Tech ID/UC Case
16953/2000-079-0
Related Cases
2000-079-0
- 國家/地區
- 美國
