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Dot-in-a-Wire White-Light-Emitting Diodes

詳細技術說明

McGill University is seeking to out-license intellectual property relating to catalyst-free growth of InGaN/GaN dot-in-a-wire light emitting diodes (LEDs) monolithically grown on Si(111).

*Abstract

The emission characteristics are controlled by the quantum dot properties during a single epitaxial growth step. The dot-in-a-wire nanoscale heterostructures exhibit: (i) Phosphor-free white LEDs with internal quantum efficiency in the order of 57%; (ii) nearly unaltered CIE chromaticity coordinates with increasing injection current; and (iii) virtually zero efficiency droop at current densities up to approximately 640 A/cm2. The performance of the device is due to superior three dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, nearly defect and strain-free nanowires and enhanced hole transport properties.

國家/地區

美國