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Refined sequential lateral solidification (SLS) system based on excimer laser and projection beam delivery enables controlled crystallization of thin amorphous silicon films

總結

High throughput laser techniques to process amorphous silicon into single or polycrystalline silicon are highly desired for high-speed circuitry applications. This technology uses the sequential lateral solidification (SLS) process, an excimer laser projection-based scheme, to controllably crystallize amorphous silicon thin films into polycrystalline silicon thin films with long grains. The technique consists of generating a sequence of excimer laser pulses that are modulated to a predetermined fluence. Upon irradiating an amorphous silicon thin film sample, the homogenized laser pulses are masked so that the patterned beams may then pattern the sample as desired. Translating the sample with respect to the patterned beams may be used to produce polysilicon with long grained, directionally-controlled crystals.

技術優勢

Produces polysilicon with long grains whose microstructure may be controlledImproves polysilicon sample qualitySemiconductor processing at low temperaturesIncreases manufacturing throughput Patent Information:Patent Issued (US 6,635,554)Tech Ventures Reference: IR MS99/04/26A

技術應用

Processing of amorphous silicon thin films into polysilicon thin filmsPolysilicon patterning

詳細技術說明

None

*Abstract

None

*Inquiry

Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR

MS99/04/26A

*Principal Investigation

*Publications

Im JS, Crowder MA, Sposili RS, Leonard JP, Kim HJ, Yoon JH, Gupta VV, Jin Song H, Cho HS. “Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization.” Phys Stat Sol. 1998 April;166(2):603-617.

國家/地區

美國