Power Amplifiers Based on Stacked Transistor Biasing
- 總結
- Researchers at Purdue University have developed a new silicon-on-insulator power amplifier based on dynamic biasing of stacked transistors. This power amplifier has much higher efficiency than previous silicon-based designs, and it is also smaller and more tightly integrated. These features could make the amplifier circuit useful for increasing the battery life of new portable devices.
- 技術優勢
- Higher efficiency than silicon designs Smaller, more tightly integrated Increased battery life of portable devices
- 技術應用
- Component for cellular phones and other portable communication systems
- 詳細技術說明
- Saeed MohammadiPurdue Electrical and Computer Engineering
- *Abstract
-
- *Background
- A power amplifier is an electrical circuit that increases the output power of a given input signal. Power amps are crucial components in cell phones, smartphones, and other radio frequency devices that both transmit and receive signals. With devices getting smaller and battery life becoming an increasing concern, there is a demand for smaller power amplifiers with higher efficiency.
- *IP Issue Date
- None
- *IP Type
- CIP-CIP
- *Stage of Development
- Prototype testing
- *Web Links
- Purdue Office of Technology CommercializationPurdue Innovation and EntrepreneurshipSaeed MohammadiPurdue Electrical and Computer Engineering
- 國家
- United States
- 申請號碼
- N/A
- 國家/地區
- 美國
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