Storing and Retrieving Data with High-Density Ferroelectric Memory
- 詳細技術說明
- Innovators at NASA's Marshall Space Flight Center have developed and patented a novel device for storing and retrieving electronic data. The device stores digital information as a multi-level digital or as an analog signal on a ferroelectric transistor that can be retrieved and converted back to the original digital data.
- *Abstract
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Innovators at NASA's Marshall Space Flight Center have developed and patented a novel device for storing and retrieving electronic data. The device stores digital information as a multi-level digital or as an analog signal on a ferroelectric transistor that can be retrieved and converted back to the original digital data. Ferroelectric memory uses an electric field to write a bit of data in the form of an electrical polarization charge to certain types of materials. The memory circuit provides for higher memory density, compensates for environmental and ferroelectric aging, and allows analog values to be directly stored in memory. In addition, the innovation is resistant to degradation from environmental and radiation exposure and relies on commercially available technologies.
- 國家/地區
- 美國
