Aging Monitoring for Power Semiconduct Devices Using Case Temperatures
- 详细技术说明
- A new method for using two dimensional case temperature-based aging monitoring for insulated-gate bipolar transistor (IGBT) modules in power converters.
- *Abstract
-
None
- *Licensing
- Zane Gernhart, Ph.D.Technology Manager zgernhart@nutechventures.orgPhone: 515-408-4685
- 国家/地区
- 美国
欲了解更多信息，请点击 这里
