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A stable graphene-like single atomic layered Si2BN structure - 2058

*Abstract

 

 

Overview

While the possibility to create a single-atom thick 2D layer from any material remains desirable, only a few such structures have been obtained other than graphene and monolayer of boron nitride.  Monolayers of Si, called silicene, have been synthesized but are found to be puckered rather than a preferred flat 2D sheet and are also intrinsically unstable against the formation of an sp3-like hybridized, bulk-like silicon structure, thereby negating their 2D potential.  UK researchers have solved this problem by using ab initio theoretical simulations to design a new stable graphene-like single atomic layered Si2BN structure that has all of its atoms with sp2 bonding with no out of plane buckling.

 

 

 

Invention

Because it is very lightweight, strong, and heat conductive, grapheneis a versatile material. Graphene has been used to help improve the performance and efficiency ofcurrent materials and substances, and it can bedeveloped in conjunction with other 2D crystals to create other compounds tosuit a broader range of applications.   

 

UK researchers are using ab initio simulations to develop a new class of single atom-thick graphitic like materialformed from Si2BN that could be used as a substitute for graphene in many fields such as bioengineering, electrical devices, and composite materials.  Dueto its 2D nature, the Si2BN sheet can be flexible and strong.  It could exhibitother properties common to 2D materials such as high electron mobilities,tunable band structures, and high thermal conductivities.  Also, the inherentmetallicity with sufficient density of states at the Fermi level allows for substantial increase inconductivity by doping or by structural rearrangement.  With these attributes, the Si2BN sheet is a promising alternative to graphene. 

 

Applications

  • electrical devices
  • composite materials
  • bioengineering
  • energy storage 

 

Advantages

  • flexibilty
  • strength
  • can be rolled into nanotubes
  • no out of plane buckling 

 

IP Status:  U.S. Patent Application No. 15/473,794

   

Recent Publications

[1] D. Singh, S. K. Gupta, Y.Son vane, and R. Ahuja, Int. J.Hydrogen Energy 42, 22942 (2017).

[2] S.-J. Yuan, H. Zhang, and X.-L. Cheng, Plasmonics (2017).

[3] V. Shukla, R. B. Araujo, N. K. Jena, and R. Ahuja, Nano Energy 41, 251(2017).

[4] K.-X. Chen, S.-S. Lyu, Z.-Y. Luo, Y.-X. Fu, Y. Heng, and D.-C. Mo,Phys. Chem. Chem. Phys. 19, 7481 (2017).

[5] A. Freitas, L. Machado, R. Tromer, C. Bezerra, and S. Azevedo,Superlattices and Microstructures 110, 281 (2017).

[6] Q. Xie, J. Yuan, N. Yu, L. Wang, and J. Wang, Comp. Mater. Sci. 135, 160(2017).

[7] E. D. Sandoval, S. Hajinazar, and A. N. Kolmogorov, Phys. Rev. B 94, 094105(2016).

 


国家/地区
美国

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