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Electronic-structure Modulation Transistor

详细技术说明

The invention is a novel transistor concept, referred to as Electronic-Structure Modulation Transistor (EMT).

*Abstract

The invention is a novel transistor concept, referred to as Electronic-Structure Modulation Transistor (EMT). The device principle is based on the electronic structure modulation of the channel by an external gate voltage. The EMT has very large ON/OFF current ratio with reasonable self gain using a few-kT supply voltage. The concept has been proven in a double-gated device structure using a 20 nm long and 10 μm wide channel consisting of Au nanocrystals and nitride traps.

EMTs have the potential to open a new class of "post-CMOS" logic devices to continue scaling in feature sizes below the tens of nanometers.

         

Potential Applications

New generation of transistor and semiconductor applications

           

Advantages

• Reduced OFF current
• Retention of self gain
• High ON/OFF current ratio with only a few kT supply voltage

*Licensing

Martin Teschlmt439@cornell.edu(607) 254-4454

其他

• Raza et al. On the possibility of an electronic-structure modulation transistor. arXiv.org November 2008.
• Patent Application: 12/711,007

国家/地区

美国