Monolithically Integrated MEMS Devices and Electronics on Silicon Carbide
- 详细技术说明
- Cornell has successfully built monolithically integrated silicon carbide (SiC) microelectromechanical (MEMS) and electronics.
- *Abstract
-
Leveraging off of the unique material properties of silicon carbide, a platform for the fabrication of monolithically integrated MEMS devices with electronic circuitry is established. Processing steps enable not only the fabrication of the structural and electronic parts individually, but also the monolithic integration of these parts onto the same substrate.
The MEMS component is fabricated as part of the SiC electronics process enabling formation of:
- Bulk micromachined piezoresistive strain sensing regions
- Surface micromachined electrostatic sensing regions
- Diaphragm, membrane, and cantilever structures
The electronic circuitry includes structures such as:
- Temperature compensated MOS for signal processing and system control
- Non-volatile memory for custom, digital programmable logic
Electronic devices which may be formed include P-N and Schottky diodes, MOS and NIM capacitors, N and P-enhanced MOSFETs, and N-type normally on depletion NMOSFETs.
Potential Applications
- High-performance MEMS sensors for harsh environmental conditions in industries such as:
- Aircraft, spacecraft, automotive, communications, nuclear reactors
Advantages
- Harnesses both SiC's superior electronic and thermomechanical properties
- Enhanced device performance due to SiC's ability to withstand high temperature, corrosive, and abrasive environments as well as improved electronic power-handling and radiation hardness capability
- *Licensing
- Martin Teschlmt439@cornell.edu(607) 254-4454
- 其他
-
- Patents: 7,170,141; 1487738; 7,615,788; EP1487738
- E. Hailu, A. R. Atwell, J. S. Duster, C. Li, M.Balseanu and K.T. Kornegay, "The MonolithicIntegration of 6H-SiC Electronics with 6H-SiC MEMS for Harsh EnvironmentApplications", Nanotech 2003 Conference Technical Proceedings.
- 国家/地区
- 美国
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