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Transfer-free Batch Fabrication of Single Layer Graphene Devices

详细技术说明

This invention describes unique growth and fabrication methods for graphene that allow for direct patterning onto the target substrate.

*Abstract

Large scale single layer graphene was patterned directly onto an evaporated copper film, and devices were fabricated by simply removing the underlying copper film. Notable improvements over existing techniques include higher carrier mobility and mechanical and electrical continuity over a large distance.

 

Potential Applications

• This technology can be used in electronics, displays, solar cells, sensors, and hydrogen storage.

 

Advantages

• This technology offers a reliable way to grow graphene that maintains its structural integrity.
• The physical and electrical properties of graphene applied by this method are superior to graphene applied by previous methods.
• The single layer of carbon atoms can be applied uniformly over a large area, which was not possible by use of older methods, opening a new potential for reliable large-scale semiconductors.
• The simple synthesis methods are compatible with conventional film technology.

*Licensing

Martin Teschlmt439@cornell.edu(607) 254-4454

其他

• US Patent 9,362,364

• MP Levendorf, CS Ruiz-Vargas, S Garg, and J Park, Transfer-free batch fabrication of single layer graphene transistors, Nano Lett 9(12) 4479-4483 (2009)

• A Ju, Researchers find reliable, mess-free way to grow graphene, Cornell Chronicle (2009)

国家/地区

美国