Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
- 技术优势
- Large available surface area (samples grown on 2-inch diameter substrates, compared to areas on the order of a few micrometers achieved by prior art) Increased device efficiencies compared to c-plane devices Planar film surface Minimized surface undulations and crystallographic defects
- 技术应用
- High-Performance Nitride-Based Optoelectronics and Semiconductor Devices This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
- 详细技术说明
- Researchers at the University of California, Santa Barbara have developed a method for enhancing growth of semipolar (Al,In,Ga,B)N films via metalorganic chemical vapor deposition (MOCVD). This method involves growth of nitride films on the semipolar {11 22} plane to overcome performance limitations associated with the polar c-plane, thus increasing device efficiencies. It yields samples grown on 2-inch diameter substrates, compared with areas of a few micrometers accomplished using existing methods. This method also results in a planar film surface, few surface undulations, and a reduced number of crystallographic defects, all necessary features to support application to state-of-the-art nitride semipolar electronic devices.
- *Abstract
-
A method for enhancing growth of semipolar (Al,In,Ga,B)N films for high-performance nitride-based optoelectronics and semiconductor devices.
- *IP Issue Date
- Mar 30, 2010
- *Principal Investigation
-
Name: Troy Baker
Department:
Name: Steven DenBaars
Department:
Name: Benjamin Haskell
Department:
Name: Michael Iza
Department:
Name: John Kaeding
Department:
Name: Shuji Nakamura
Department:
Name: Hitoshi Sato
Department:
- 附加资料
- Patent Number: US7687293B2
Application Number: US2007655572A
Inventor: Sato, Hiroshi | Kaeding, John F. | Iza, Michael | Baker, Troy J. | Haskell, Benjamin A. | DenBaars, Steven P. | Nakamura, Shuji
Priority Date: 20 Jan 2006
Priority Number: US7687293B2
Application Date: 19 Jan 2007
Publication Date: 30 Mar 2010
IPC Current: H01L002100 | H01L002900
US Class: 438046 | 257012 | 257013 | 257079 | 257086 | 257094 | 257E21113 | 257E21121 | 257E21463 | 438041 | 438048 | 438481 | 438485
Assignee Applicant: The Regents of the University of California
Title: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Usefulness: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Summary: For growing device-quality planar semipolar nitride semiconductor thin films to form nitride semipolar electronic devices (claimed) e.g. semipolar LEDs.
Novelty: Enhancing growth of device-quality planar semipolar nitride semiconductor thin film involves depositing semipolar nitride semiconductor thin film on nucleation/buffer layer of mixed nitrides of aluminum, indium or gallium containing indium
- 主要类别
- 电子
- 细分类别
- 半导体
- 申请号码
- 7687293
- 其他
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Background
Existing methods of producing semipolar nitride films are extremely cumbersome and yield areas too small for device fabrication, thus there is a need for a new method that overcomes these obstacles in order to take advantage of the performance benefits of using semipolar nitride films.
Additional Technologies by these Inventors
- Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
- Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
- Nonpolar (Al, B, In, Ga)N Quantum Well Design
- Improved Manufacturing of Semiconductor Lasers
- Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
- Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
- GaN-Based Thermoelectric Device for Micro-Power Generation
- Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
- Method for Growing High-Quality Group III-Nitride Crystals
- Growth of Planar Semi-Polar Gallium Nitride
- Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
- MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
- Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
- Low Temperature Deposition of Magnesium Doped Nitride Films
- Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
- Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
- Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
- Phosphor-Free White Light Source
- Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
- High Efficiency LED with Optimized Photonic Crystal Extractor
- Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
- LED Device Structures with Minimized Light Re-Absorption
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Oxyfluoride Phosphors for Use in White Light LEDs
- III-V Nitride Device Structures on Patterned Substrates
- Growth of Semipolar III-V Nitride Films with Lower Defect Density
- Improved GaN Substrates Prepared with Ammonothermal Growth
- Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
- Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
- Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
- Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
- Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
- Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
- Defect Reduction in GaN films using in-situ SiNx Nanomask
- Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
- Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
- Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
- High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
- Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
- Nonpolar III-Nitride LEDs With Long Wavelength Emission
- Method for Increasing GaN Substrate Area in Nitride Devices
- Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
- Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
- UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
- Low-Droop LED Structure on GaN Semi-polar Substrates
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Growth of High-Performance M-plane GaN Optical Devices
- Method for Enhancing Growth of Semipolar Nitride Devices
- Transparent Mirrorless (TML) LEDs
- Solid Solution Phosphors for Use in Solid State White Lighting Applications
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
- High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
- High Light Extraction Efficiency III-Nitride LED
- Tunable White Light Based on Polarization-Sensitive LEDs
- Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
- Improved Anisotropic Strain Control in Semipolar Nitride Devices
- III-Nitride Tunnel Junction with Modified Interface
- Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
- Increased Light Extraction with Multistep Deposition of ZnO on GaN
- Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
- Contact Architectures for Tunnel Junction Devices
- New Blue Phosphor for High Heat Applications
- Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
- Methods for Fabricating III-Nitride Tunnel Junction Devices
- Multifaceted III-Nitride Surface-Emitting Laser
- Laser Diode System For Horticultural Lighting
- Fabricating Nitride Layers
- Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
- Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
- Laser Lighting System Incorporating an Additional Scattered Laser
Tech ID/UC Case
21821/2006-178-0
Related Cases
2006-178-0
- 国家/地区
- 美国
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