Laser crystallization process for generating uniform grain orientations in thin films
- 总结
- James Im, Ph.D.
- 技术优势
- Increases electron mobility in thin films compared to conventional approachesCompatible with both semiconductor and metal filmsProvides well defined crystallographic orientationPatent Information:Patent Issued (US 8734584)Tech Ventures Reference: IR M05-003
- 技术应用
- Flat panel displaysImage sensorsThin film transistors
- 详细技术说明
- James Im, Ph.D.
- *Abstract
-
None
- *Inquiry
- Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu
- *IR
- M05-003
- *Principal Investigation
-
- *Publications
- van der Wilt P, Kane M, Limanov A, Firester A, Goodman L, Lee J, Abelson J, Chitu A, Im J. "Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates" MRS Bulletin. 2006 Jun;31(6):461-465.
- *Web Links
- Patent number: US20060102901USPTO: US20060102901A1
- 国家/地区
- 美国
欲了解更多信息，请点击 这里
