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Low Band Gap Polymers

详细技术说明

None

*Abstract

This invention describes the preparation of a new low band-gap (~0.5eV) conjugated polymer, accomplished via the electro-polymerization of Acenophto[1,2-b]thieno[3,4-e]pyrazines. This polymer has an application in light emitting-diodes (LEDs),photovoltaic devices, sensors, electrochromic devices, and field effect transistors (FET). The advantage of utilizing conjugated polymers in such applications is the ability to tune the properties of such materials at the�molecular level. Control of polymer band gap is an important property in the production of technologically useful materials.

附加资料

Patent Number: US7888452B2
Application Number: US2008197848A
Inventor: Rasmussen, Seth C. | Nietfeld, Jon P.
Priority Date: 24 Aug 2007
Priority Number: US7888452B2
Application Date: 25 Aug 2008
Publication Date: 15 Feb 2011
IPC Current: C08G007500
US Class: 528377 | 136263 | 257040 | 438099 | 528373 | 528380
Assignee Applicant: NDSU Research Foundation,Fargo
Title: Low band gap semiconducting polymers
Usefulness: Low band gap semiconducting polymers
Summary: In apparatus (claimed) e.g. electrical devices, e.g. photovoltaic devices, sensors, display devices, and electrochromic devices comprising components of plastic devices; in light emitting-diodes and field effect transistors.
Novelty: New polymer useful in apparatus e.g. electrical devices, photovoltaic devices, sensors, display devices, and electrochromic devices comprises at least one substituted 8H-9lambdaasterisk4asterisk-thia-7,11-diaza-cyclopenta(k)fluoranthene unit

主要类别

光学

细分类别

发光二极管/有机发光二极管

国家/地区

美国