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Gating using Na3Bi Dirac semimetals thin films on an electrical insulator such as as Al2O3

总结

A method of forming a topological Dirac semimetal layer on a substrate. The topological transistor is switched from conventional insulator to topological insulator via an electric field with a tunable bandgap. The new system aims for a ten-fold improvement in energy efficiency.

技术优势

- Novel IP on 2D materials
- Demonstrated Bandgap and
Switching
- Awarded $34 million Australian Research Council Centre of Excellence (2017)
- 14 Australian and International Science Centers

技术应用

- Energy usage for computing
- Reduction in carbon dioxide (CO2) emissions

详细技术说明

We envision a topological transistor in which an electric field from gate electrodes switches a material from conventional insulator to topological insulator. In the topological insulator, current will be carrier by ballistic 1D edge modes.
We have developed a method of forming a topological Dirac semimetal layer on a substrate.
Using this 2D material we have developed an electric field-effect structure which can be used to alter the charge carrier density and band gap in a topological Dirac semimetal film. In an ultrathin topological Dirac semimetal we can tune the bandgap by over 400 meV, from conventional insulator to topological insulator, realizing a platform suitable for a topological transistor.

合作类型

Licensing

申请日期

01/05/2017 00:00:00

申请号码

PCT/AU2017/050399

其他

Monash is actively seeking expert Industry Advisors to ensure that this program has commercial value and is meeting industry’s future needs.
Monash will consider licensing and/ or partnering opportunities to develop this technology further.

ID号码

2016-012

国家/地区

澳洲