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Optimized Alternating Phase Shifted Mask Design

总结

A Method For Reducing Lens Aberrations Sensitivity And Proximity Effects Of Alternating Phase Shifted Masks Is Described. The Critical Features Of A Chip Design Layout Are First Identified. Multiple, Narrow Phase Regions And Auxiliary Phase Transitions, Which Provide Additional Opaque Features, Are Then Formed Alongside The Critical Features Such That A Grating Pattern Of Substantially Uniform Pitch Is Printed. Together With A Complementary Trim Mask, The Circuit Pattern So Delineated Has Reduced Sensitivity To Lens Aberrations And Proximity Effects.

附加资料

Patent Number: US6338922B1
Application Number: US2000566885A
Inventor: Liebmann, Lars W. | Wong, Alfred K.
Priority Date: 8 May 2000
Priority Number: US6338922B1
Application Date: 8 May 2000
Publication Date: 15 Jan 2002
IPC Current: G03F000100 | G03F000720
US Class: 430005 | 716053 | 716055 | 716021
Assignee Applicant: International Business Machines Corporationmonk
Title: Optimized alternating phase shifted mask design
Usefulness: Optimized alternating phase shifted mask design
Summary: For converting chip design into phase shifted mask design during very large scale integrated (VLSI) device manufacture.
Novelty: Field line width variation improvement method for VLSI device manufacture, involves forming a grating pattern of uniform pitch, by forming phase regions on either sides of critical features of chip layout

主要类别

光学

细分类别

光学系统

申请号码

US2000566885A

国家/地区

香港