This novel plasma immersion ion implantation technology is performed in a low pressure steady state direct current and long-pulse mode, with the help of a grounded / biased conducting grid positioned between the wafer stage and plasma source.
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Disclosed Herein Are Compounds Shown As Formula I:Wherein R<1>-R<11 >Are Each Independently Selected From A Group Comprising Hydrocarbyl, Substituted Hydrocarbyl, Heterohydrocarbyl, And Substituted Heterohydrocarbyl Containing 1 To 20 Carbon Atoms And Two Or More Of The R<1>-R<1.....
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Total internal reflection side emitting coupling device
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Light guiding strip and double-sided planar light apparatus
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This is a method which is efficient in improving the percolation efficiency of the electrically conductive adhesives (ECAs). We apply a series of halogens and pseudohalogens for surface pre-modification of the conductive fillers. This treatment can result in the formation of a thin layer of nano-isl.....
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