Silicon material is a cost efficientapproach to manufacturing optoelectronic sensors.Unique femtosecond laser irradiationmethod does not require expensive and complicated facilities.Amorphous silicon is easier to generateas it is embedded in the nano-crystalline layer.
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This technology has shown that the gain bandwidth does not present a fundamental limitation to the minimum pulse duration in an amplifier-similariton laser.
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High operating temperature (>100˚ C)Increased membrane hydration
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ΓÇó Orders of magnitude increase in the magneto-resistance (a measure of state distinguishability)ΓÇó Near-read disturb free operation ΓÇó Significant improvement in the robustness of data-sensingΓÇó Permits use of simple designs to achieve power savings
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