Reduces light reflections Increased light extraction efficiency
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Increased brightness Increased light extraction and conversion efficiencies
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Reduced dislocation density in GaN films Reduced stacking fault density Eliminates polarization fields Improved performance in GaN-based devices (longer lifetimes, less leakage current, more efficient doping and higher output efficiency)
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Allows for the production of thick a-plane GaN films for use as substrates for polarization-free device growth; Produces films of superior quality that are suitable for subsequent device regrowth by a variety of growth techniques.
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Significantly improves film quality by allowing fabrication of enhanced GaN substrate layers for subsequent non-polar device fabrication; Greatly improves subsequent device performance.
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