An ultraviolet detector, comprising the structure: one sapphire substrate layer; a high temperature AlN buffer layer grown on the sapphire substrate layer, the high temperature AlN buffer layer is 740 ℃ ~ 820 ℃ temperature obtained under; one temperature GaN buffer layer grown on the high temperatur.....
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《馬禮遜文集》之一作者/Author: 張西平、彭仁賢及吳志良主編出版社/Publisher: 大象出版社
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《馬禮遜文集》之一作者/Author: 張西平、彭仁賢及吳志良主編出版社/Publisher: 大象出版社
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