New Materials for the Formation of Polymer Junction Diodes
- Technology Benefits
- Low-cost, high-volume production is possible Large-area devices can be fabricated easily Thin, flexible, and/or conformable devices are possible High solar energy conversion efficiency
- Technology Application
- Electroluminescence with high quantum or power efficiency Solid state lighting Photodetection at high sensitivity Solar cells Large area thin film transistors capable of carrying high current densities
- Detailed Technology Description
- The innovative polymer p-i-n junction diodes are formed by simple solution processing at ambient conditions. The diodes are particularly useful for applications requiring electroluminescence with high quantum or power efficiency, photodetection at high sensitivity, solar energy conversion at high efficiency, and large area thin film transistors capable of carrying high current densities.
- Supplementary Information
- Patent Number: US7939900B2
Application Number: US200841884A
Inventor: Pei, Qibing
Priority Date: 7 Sep 2005
Priority Number: US7939900B2
Application Date: 4 Mar 2008
Publication Date: 10 May 2011
IPC Current: H01L0031115
US Class: 257429 | 2520622 | 257040 | 257431 | 257439 | 257458 | 257656 | 257E29336 | 313498 | 313504 | 313506
Assignee Applicant: The Regents of the University of California
Title: Materials for the formation of polymer junction diodes
Usefulness: Materials for the formation of polymer junction diodes
Summary: For photovoltaic energy conversion; in solar energy harvesting; in organic light emitting diode displays; in a photovoltaic cell; in solid state device; in semiconductor devices.
Novelty: Static p-i-n junction useful for photovoltaic energy conversion comprises polymer composite containing mobile anions or cations where mobile anions or cations are immobilized on command
- Industry
- Environmental/Green Technology
- Sub Category
- Solar Cell
- Application No.
- 7939900
- Others
-
State of Development
The innovation has been physically demonstrated.
Background
Compared to conventional semiconductor devices, polymer semiconductor devices are particularly attractive for applications in which flexibility, light weight, large-area thin film, low-cost, and/or environmentally safe characteristics are important. However, despite these potential advantages, devices made from neutral conjugated polymers have found limited applications due to their low carrier mobility and charge injection barrier at the polymer/electrode interfaces. Polymer devices that could overcome these limitations and offer the advantages listed above would be of great benefit. The p-i-n junction diodes disclosed here do exactly that: they overcome the noted limitations while exhibiting many of the benefits associated with polymer devices.
Additional Technologies by these Inventors
- Regioregular Copolymers of 3-alkoxythiophene and their Photovoltaic Application
- Bistable Electroactive Polymers
- Bulk Polymer Composites
- Thermally Stable Silver Nanowire Transparent Electrode
- Transparent Bulk Photoluminescent Quantum Dots/Polymer Nanocomposite
Tech ID/UC Case
20163/2005-239-0
Related Cases
2005-239-0
- *Abstract
-
UCLA Researchers in the Department of Materials Science and Engineering have developed polymer p-i-n junction diodes.
- *IP Issue Date
- May 10, 2011
- *Principal Investigator
-
Name: Qibing Pei
Department:
- Country/Region
- USA
