Fabrication of N-face to Improve Telecommunications Efficiency
- 技術優勢
- Low buffer leakageLow parasitic resistanceHigh breakdownHigh power and high efficiency mm-wave transistors
- 技術應用
- TelecommunicationsTransistor
- 詳細技術說明
- Researchers at the University of California, Santa Barbara present a new method to fabricate nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, low parasitic resistance, and high breakdown. This method consists of isolating the buffer from the substrate with a large bandgap AIGaInN layer to suppress impurity incorporation from the substrate into the buffer, and capping the structure with a highly conductive layer to provide extremely low access and ohmic contact resistances. This technique offers improvements that are critical for developing mm-wave transistors with high power and high efficiency to be used for telecommunications.
- *Abstract
-
A new method to fabricate nitrogen-face (N-face) nitride-based electronic devices with low buffer leakage, low parasitic resistance, and high breakdown.
- *IP Issue Date
- May 3, 2011
- *Principal Investigation
-
Name: Umesh Mishra
Department:
Name: Yi Pei
Department:
Name: Siddharth Rajan
Department:
Name: Man Hoi Wong
Department:
- 申請號碼
- 7935985
- 其他
-
Background
Gallium nitride (GaN) devices have been shown to be promising for high voltage high frequency applications, due to the high breakdown field and high electron velocity in GaN, as well as high charge density in the channel. Growth of a high quality and reliable semi-insulating buffer is essential for low DC dissipation and sharp pinch-off high electron mobility transistors (HEMTs). However, the performance of highly-scaled nitride-based HEMTs is limited by parasitic resistances at the ohmic contacts. New developments must counteract parasitic resistances.
Additional Technologies by these Inventors
- Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)
- (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
- Polarization-Doped Field Effect Transistors with Increased Performance
- High-Quality N-Face GaN, InN, AlN by MOCVD
- Defect Reduction in GaN films using in-situ SiNx Nanomask
- GaN-based Vertical Metal Oxide Semiconductor and Junction Field Effect Transistors
- Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
- Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
- A Structure For Increasing Mobility In A High-Electron-Mobility Transistor
- III-N Based Material Structures and Circuit Modules Based on Strain Management
- Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers
- Improved Performance of III-Nitride Photonic Devices
- Gated Electrodes For Electrolysis And Electrosynthesis
- Methods for Locally Changing the Electric Field Distribution in Electron Devices
Tech ID/UC Case
29538/2007-269-0
Related Cases
2007-269-0
- 國家/地區
- 美國
