Design and Analysis of High-Density Flash Sensing-based 3T 2-Domain Wall MTJ Content Addressable Memory
- 技術優勢
- Energy Efficient, Increased Density, Increased Robustness
- 詳細技術說明
- The proposed CAM architecture can form words of various lengths, such as 4-bit, 8-bit, and 16-bit words. These cells can be employed hierarchically to suit large word sizes while accelerating the search speed. This CAM architecture draws inspiration from flash design, sensing for higher density, energy efficiency, and robustness.
- *Abstract
-
Researchers at the University of South Florida have developed two novel architectures: a three transistor, two domain wall-based magnetic tunnel junction CAM cell, and a four transistor, two magnetic tunnel junction CAM cell for designing Content-addressable memory (CAM).
- 國家/地區
- 美國
欲了解更多信息，請點擊 這裡
