MacEtch for Ge and β-Ga2O3
- 詳細技術說明
- Dr. Li from the University of Illinois at Urbana-Champaign has developed Metal assisted Etching (MacEtch) to fabricate structure and texture on Ge and β-Ga2O3Et.
- *Abstract
-
Dr. Li from the University of Illinois at Urbana-Champaign has developed Metal assisted Etching (MacEtch) to fabricate structure and texture on Ge and β-Ga2O3Et. The optoelectronic devices made by this method show improvement in both optical and electrical property.
For more information, please contact the Office of Technology Management at otm@illinois.edu.
- *IP Issue Date
- None
- *IP Type
- Other Patent
- 國家
- Not Available
- 申請號碼
- None
- 國家/地區
- 美國
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