Voltage-Controlled Magnetic Tunnel Junction Switch And Magnetic Memory Bit
- 技術優勢
- Scalable Nonvolatile High speed High endurance High density Energy efficient Radiation hardness
- 技術應用
- Implementation in mobile devices such as digital cameras, laptops, cellular phones, media players, book readers, etc.
- 詳細技術說明
- Researchers at UCLA have developed a magnetic tunnel junction switch system and a magnetic memory bit using voltage-controlled technologies. This invention describes the basic functionality for the realization of a Magneto-Electric (i.e. voltage controlled) MRAM system that does not require the transfer of charges thus making this technology more energy efficient than other MRAM technologies such as spin transfer torque and thermally-assisted switching.
- *Abstract
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UCLA researchers in the Department of Electrical Engineering have developed a voltage controlled magnetic tunnel junction switch and magnetic memory bit that describes the basic functionality for the realization of a voltage-controlled rather than current-controlled MRAM.
- *Principal Investigation
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Name: Pedram Khalili Amiri
Department:
Name: Kosmas Galatsis
Department:
Name: Kang Wang
Department:
- 其他
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State Of Development
Researchers have designed prototype devices and are conducting theoretical and simulation studies. The voltage-induced switching of magnetic tunnel junctions has been experimentally demonstrated.
Background
Magnetic Random Access Memory (MRAM) is advantageous because of its non-volatile nature, high speed, high endurance, high density and its lower power consumption over conventional RAM chip technologies. It's especially useful for nonvolatile memory applications where low energy consumption is critical, such as in mobile communication and computing systems, as well as in medical implants and sensors. Because of the many advantages, it has been suggested that MRAM may eventually become the basis for all types of memory.
Tech ID/UC Case
22133/2011-524-0
Related Cases
2011-524-0
- 國家/地區
- 美國
