Search
  • 網站搜尋
亞洲知識產權資訊網為知識產權業界提供一個一站式網上交易平台,協助業界發掘知識產權貿易商機,並與環球知識產權業界建立聯繫。無論你是知識產權擁有者正在出售您的知識產權,或是製造商需要購買技術以提高操作效能,又或是知識產權配套服務供應商,你將會從本網站發掘到有用的知識產權貿易資訊。
返回搜索結果

Optimization of Laser Bar Orientation for Nonpolar Laser Diodes


技術優勢

·         Superior manufacturability of nitride laser diodes ·         Improved device performance through elimination of polarization-induced electric fields and reduction of effective hole mass ·         Decreased current densities necessary to generate optical gain ·         Less heat generation, longer device lifetimes, and higher production yields


技術應用

·         Solid-state lighting systems, including projection displays ·         High-resolution printers ·         High-density optical data storage systems ·         Optical sensing


詳細技術說明

Researchers at UC Santa Barbara have developed a method for the growth and fabrication of nonpolar laser diodes. The structures can be grown either directly on free-standing nonpolar substrates or on nonpolar template layers pre-deposited on a foreign substrate. Many growth techniques are suitable for the method, including metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE). For m-plane nitride laser diodes, optical gain is maximized when laser bars are oriented along the c-axis and minimized for laser bars oriented along the a-axis; for a-plane devices, optical gain is maximized for laser bars oriented along the c-axis and minimized when oriented along the m-axis. This in-plane, orientation-dependent gain is a phenomenon that is currently unique to nonpolar nitride laser diodes.


申請號碼

7839903


其他

Background

Growing nitride laser diodes along the polar c-direction causes a polarization-induced electric field that causes a large effective hold mass that is detrimental to performance. Alternatively, growing nitride thin films along a nonpolar axis offers a means of eliminating polarization effects and reducing the effective hole mass in device structures. These changes should help to decrease the current densities necessary to generate optical gain in nitride laser diodes. In particular, nonpolar nitride laser bars should be properly oriented with regards to the planes of semiconductor crystals in order to achieve the aforementioned benefits.  


Additional Technologies by these Inventors


Tech ID/UC Case

24986/2007-425-0


Related Cases

2007-425-0


國家/地區

美國

欲了解更多信息,請點擊 這裡
Business of IP Asia Forum
桌面版