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Defect Reduction in GaN films using in-situ SiNx Nanomask

技術優勢: Uniform defect reduction across filmHighly efficient process capable of being done on the nanometer scaleImproved performance of semi-polar and non-polar group-III nitride based devicesHighly adaptable and easily controllable process

技術應用: LDs and LEDsGroup-III nitride materialsHigh powered electronic and optoelectronic devices

詳細技術說明: Researchers at the University of California, Santa Barbara have developed an efficient method to significantly reduce defects in non-polar and semi-polar group-III nitride films. Through the use of in-situ SiNx as a nanomask when growing GaN substrates, researchers have demonstrated reduced stacking fault density, reduced thread dislocation density, reduced surface roughness, reduced sub-micron pits, and increased luminescence. Compared to the lateral epitaxial overgrowth (LEO) technique, this invention has the advantage of being a simple process that avoids contamination characteristic of the ex-situ process used in LEO. Unlike LEO, this new process also facilitates nanometer scale lateral epitaxial overgrowth at the open pores of the film which reduces the differences between the wing and window regions of film which has adverse effects on devices if untreated. All structure improvements contribute to an overall reduction of defects uniformly across the film which significantly increases the efficiency of the material.

*Abstract: An efficient method to significantly reduce defects in non-polar and semi-polar group-III nitride films.

*IP Issue Date: May 25, 2010

*Principal Investigation: Name: Arpan Chakraborty
Department:

Name: Steven DenBaars
Department:

Name: Kwang Choong Kim
Department:

Name: Umesh Mishra
Department:

Name: James Speck
Department:

附加資料: Patent Number: US7723216B2
Application Number: US2007801283A
Inventor: Chakraborty, Arpan | Kim, Kwang-Choong | Speck, James S. | DenBaars, Steven P. | Mishra, Umesh K.
Priority Date: 9 May 2006
Priority Number: US7723216B2
Application Date: 9 May 2007
Publication Date: 25 May 2010
IPC Current: H01L002120
US Class: 438483 | 257189 | 438479 | 438481 | 438604 | 438689
Assignee Applicant: The Regents of the University of California
Title: In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Usefulness: In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N
Summary: For growing a reduced defect density nonpolar or semipolar III-nitride layer used for fabricating nonpolar or semipolar III-nitride based device (claimed).
Novelty: Growing a reduced defect density nonpolar or semipolar III-nitride layer involves growing nonpolar or semipolar III-nitride layer on silicon nitride nanomask layer

主要類別: 電子

細分類別: 半導體

申請號碼: 7723216

其他

Background

The usefulness of non-polar and semi-polar group-III nitrides such as gallium nitride (GaN) and its alloys has been well established for its use in the fabrication of optoelectronic and high-powered electronic devices. Given recent trends in industry standards there is considerable interest in the growth of nonpolar (a- and m-plane) GaN based epitaxial films. The problems associated with the growth of these nonpolar GaN based films is characterized by high defect density, reduced carrier mobility, and low reliability which all contribute to an overall lower efficiency. However, high performance devices can be achieved by eliminating these defects by improving the structural quality of the nonpolar GaN films.

Additional Technologies by these Inventors

Tech ID/UC Case

24135/2006-530-0

Related Cases

2006-530-0

國家/地區: 美國

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