Optoelectronic devicesHigh power electronic devices
詳細技術說明
Researchers at the University of California, Santa Barbara have developed a novel method for growing high quality semipolar III-V nitride based optoelectronic devices. This includes growing an active layer on suitable material with facetted surfaces, which are typically semipolar planes, and a method for fabricating the facetted surfaces. The use of these growth techniques results in semipolar light emitting layers with a low defect density through reduction of the polarization effects in GaN devices. Furthermore, these layers may be grown using commonly used techniques including, MOCVD, MBE, or HPVE.
附加資料
Patent Number: US7858996B2 Application Number: US2007676999A Inventor: Zhong, Hong | Kaeding, John F. | Sharma, Rajat | Speck, James S. | DenBaars, Steven P. | Nakamura, Shuji Priority Date: 17 Feb 2006 Priority Number: US7858996B2 Application Date: 20 Feb 2007 Publication Date: 28 Dec 2010 IPC Current: H01L003300 US Class: 257098 | 257079 | 257094 | 257103 | 257E51018 Assignee Applicant: The Regents of the University of California Title: Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices Usefulness: Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices Summary: For e.g. optoelectronic device. Novelty: Optoelectronic device comprises substrate or template having several oblique or facetted surfaces
主要類別
光學
細分類別
發光二極管/有機發光二極管
申請號碼
7858996
其他
Background
Current nitride technology for electronic and optoelectronic devices employs nitride films grown in the polar c-direction. Unfortunately, the structure of III-nitride based devices suffers from the undesirable quantum-confined Stark effect (QCSE), due to the strong electric fields and polarization effects along the c-direction. While growing devices on nonpolar planes of the crystal seems advantageous, growth of nonpolar nitrides remains challenging and has not yet been widely adopted in the industry.
