Improved Performance Vertical Cavity Surface Emitting Laser
- 技術優勢
- Small Low loss High modulation bandwidth High parameter variability
- 技術應用
- Vertical-Cavity Surface-Emitting Lasers (VCSEL) This technology is available for licensing.
- 詳細技術說明
- Researchers at the University of California, Santa Barbara have developed improved performance apertures and mirrors to decrease losses and increase functionality in Vertical-Cavity Surface-Emitting Lasers (VCSEL). A novel method of fabrication has also been developed for these apertures and mirrors to increase laser modulation bandwidth. This fabrication process allows for design variation of several important parameters including mirror thickness, taper length, aperture length, taper angle, and aperture opening diameter.
- *Abstract
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Improved performance apertures and mirrors to decrease losses and increase functionality in Vertical-Cavity Surface-Emitting Lasers (VCSEL).
- *IP Issue Date
- Dec 29, 2009
- *Principal Investigation
-
Name: Alexander Fang
Department:
Name: Richard Jones
Department:
Name: Hyundai Park
Department:
Name: Matthew Sysak
Department:
- 附加資料
- Patent Number: US7639719B2
Application Number: US2007968000A
Inventor: Fang, Alexander | Jones, Richard | Park, Hyundai | Sysak, Matthew
Priority Date: 31 Dec 2007
Priority Number: US7639719B2
Application Date: 31 Dec 2007
Publication Date: 29 Dec 2009
IPC Current: H01S000300 | H01L002100 | H01L002334 | H01L003364 | H01S000304
US Class: 372034 | 257712 | 257E33075 | 372033 | 438026
Assignee Applicant: Intel Corporationnta Clara
Title: Thermal shunt for active devices on silicon-on-insulator wafers
Usefulness: Thermal shunt for active devices on silicon-on-insulator wafers
Summary: Thermal shunt is used for hybrid lasers formed on silicon-on-insulator wafer (claimed), used for producing terabit-level optical computer data pipes for high-performance computing applications.
Novelty: Thermal shunt for hybrid lasers, comprises silicon epitaxial layer as waveguide, silica buried oxide layer as lower cladding, lower silicon substrate, via traversing buried oxide layer, and heat-conductive material filled in via
- 主要類別
- 電子
- 細分類別
- 半導體
- 申請號碼
- 7639719
- 其他
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Background
Vertical-Cavity Surface-Emitting Lasers (VCSEL) show promise for use in future optical devices because they can achieve higher data rates with less power dissipation. Existing VCSELs have undesirably large dimensions and require high currents to achieve high bandwidth. Imperfect aperture shape and small aperture diameter also produces undesirable optical scattering and high losses.
Additional Technologies by these Inventors
Tech ID/UC Case
22064/2008-056-0
Related Cases
2008-056-0
- 國家/地區
- 美國
