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Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals

技術優勢

Allows simple production of GaN wafers of any orientations Less impurities on the crystals compared to previous grow methods Faster than previous methods and easily scalable Cost effective

技術應用

Gallium nitride wafers     This technology is available for a non-exclusive license. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

詳細技術說明

Researchers at the University of California, Santa Barbara have developed a method to grow polyhedron-shaped GaN bulk crystals, which are not possible using existing growth methods. This shape of GaN crystals has an advantage over the existing platelet-shaped GaN since GaN wafers of any orientation can be obtained simply by slicing the polyhedron.

*Abstract

A method to grow polyhedron-shaped GaN bulk crystals, which are not possible using existing growth methods.

*IP Issue Date

Aug 28, 2012

*Principal Investigation

Name: Tadao Hashimoto

Department:

Name: Shuji Nakamura

Department:

附加資料

Patent Number: US8253221B2
Application Number: US2008234244A
Inventor: Hashimoto, Tadao | Nakamura, Shuji
Priority Date: 19 Sep 2007
Priority Number: US8253221B2
Application Date: 19 Sep 2008
Publication Date: 28 Aug 2012
IPC Current: H01L002920
US Class: 257615 | 257E21697 | 423409 | 438604
Assignee Applicant: The Regents of the University of California
Title: Gallium nitride bulk crystals and their growth method
Usefulness: Gallium nitride bulk crystals and their growth method
Summary: (I) is useful: in a GaN wafer (claimed); and for fabrication of visible and ultraviolet optoelectronic devices and high-power electronic devices. The method is useful for growing other III-nitrides such as aluminum nitride and indium nitride.
Novelty: New gallium nitride crystal having polyhedron shape with exposed specific m-planes and exposed specific N-polar c-plane, useful in gallium nitride wafer

主要類別

電子

細分類別

半導體

申請號碼

8253221

其他

Background

In order to eliminate the problems arising from heteroepitaxial growth, gallium nitride wafers sliced from bulk GaN crystals must be used. A new technique for growing bulk GaN crystals is based on using supercritical ammonia, which has high solubility of source materials, and which has high transport speed of dissolved precursors. This ammonothermal method has a potential for growing large GaN crystals. However, existing technology is limited by the crystal size, because the growth rate is not fast enough to obtain large crystals.

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Improved Manufacturing of Semiconductor Lasers
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Group III-Nitride Crystals using Supercritical Ammonia and Nitrogen
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Improved GaN Substrates Prepared with Ammonothermal Growth
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Nonpolar III-Nitride LEDs With Long Wavelength Emission
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

21921/2007-809-0

Related Cases

2007-809-0

國家/地區

美國