Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
技術優勢
Selective removal of desired material without damaging sensitive device layers Facilitates the formation of nitride microcavity structures for optoelectronic devices
技術應用
Nitride-Based Optoelectronic Devices Nitride-Based Semiconductor Devices This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
詳細技術說明
Researchers at the University of California, Santa Barbara have developed a safe etching technique for use with (Al, In, Ga)N materials. The method is designed to fabricate free-standing thin nitride wafers or to remove material from thin nitride membranes. It can remove desired material without damaging sensitive device layers, including quantum well layers, and can facilitate the formation of nitride microcavity structures. The technique is applicable to nitride-based optoelectronic and semiconductor devices.
附加資料
Patent Number: US7795146B2 Application Number: US2006403288A Inventor: Speck, James S. | Haskell, Benjamin A. | Pattison, P. Morgan | Baker, Troy J. Priority Date: 13 Apr 2005 Priority Number: US7795146B2 Application Date: 13 Apr 2006 Publication Date: 14 Sep 2010 IPC Current: H01L0021461 US Class: 438689 | 438458 | 438705 | 438745 Assignee Applicant: The Regents of the University of California | Japan Science and Technology Agency,Kawaguchi, Saitama, Prefecture Title: Etching technique for the fabrication of thin (Al, In, Ga)N layers Usefulness: Etching technique for the fabrication of thin (Al, In, Ga)N layers Summary: Used in etching of thin epitaxially-grown nitride layers to provide (aluminum, indium, gallium) nitride layer or thin film, optoelectronic device, free-standing substrate, transistor, and non linear optical waveguide (claimed). Novelty: Etching of nitride layers used in transistors comprises implanting substrate with foreign ions, performing regrowth of nitride structure on implanted substrate, and bonding exposed growth surface of nitride structure to carrier wafer
Current nitride etching techniques face problems such as damaging sensitive device layers, alteration of quantum well layers and large scale roughening of the etched surface.
