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Novel Composite Semiconductor Substrate for Thin-Film Device Transfer

技術優勢

Not limited by wafer crystallographic orientationNot limited to Si homoepitaxy (can be used on other semiconductor materials)Starting materials can be reused, saving upfront costs

技術應用

Semiconductor and thin film device fabricationDevice substrate transferLow cost manufacturing of silicon based solar cells

詳細技術說明

Researchers at UCLA have identified a high quality composite semiconductor substrate for epitaxial deposition of electronic device layers also capable of transferring device layers from the composite substrate to another substrate of choice. This technique offers to reduce costs associated with having to replace starting materials and it can also be extended to a variety of semiconductor material combinations to create transfer-ready semiconductor substrates. This transfer substrate and process will be useful for any thin film semiconductor device manufacturers.

*Abstract

Researchers at UCLA have developed a composite semiconductor substrate used for thin film device fabrication compatible with epitaxial processes requiring subsequent substrate transfer. Their technique has distinct advantages over current methods in use today and offers to save costs to manufacturers.

*Applications

• Semiconductor and thin film device fabrication
• Device substrate transfer
• Low cost manufacturing of silicon based solar cells

*IP Issue Date

Jan 7, 2014

*Principal Investigation

Name: Mark Goorsky

Department:

Name: Monali Joshi

Department:

附加資料

Patent Number: EP667900B1
Application Number: EP1991902210A
Inventor: TSUI, Lap-Chee | ROMMENS, Johanna, M. | KEREM, Bat-sheva, Department of Genetics
Priority Date: 12 Jan 1990
Priority Number: EP667900B1
Application Date: 11 Jan 1991
Publication Date: 23 May 2001
IPC Current: C07K001447 | C12N000115 | C12N000119 | C12N000121 | C12N001512 | C12N001585 | C12Q000168
Assignee Applicant: HSC Research Development Corporation,Toronto, Ontario, M5G 1X8,00615912
Title: INTRONS AND EXONS OF THE CYSTIC FIBROSIS GENE AND MUTATIONS AT VARIOUS POSITIONS OF THE GENE | INTRONS UND EXONS DES GENS FÜR CYSTISCHE FIBROSE SOWIE MUTATIONEN AN MEHREREN STELLEN DES GENS | INTRONS ET EXONS DU GENE DE LA FIBROSE CYSTIQUE ET MUTATIONS A
Usefulness: INTRONS AND EXONS OF THE CYSTIC FIBROSIS GENE AND MUTATIONS AT VARIOUS POSITIONS OF THE GENE | INTRONS UND EXONS DES GENS FÜR CYSTISCHE FIBROSE SOWIE MUTATIONEN AN MEHREREN STELLEN DES GENS | INTRONS ET EXONS DU GENE DE LA FIBROSE CYSTIQUE ET MUTATIONS A DIFFERENTES POSITIONS DU GENE
Novelty: Mutant cystic fibrosis trans-membrane conductance regulator gene used for producing prods. for diagnosis, screening and therapy of cystic fibrosis

主要類別

環保/綠色科技

細分類別

太陽能電池

申請號碼

8624357

其他

Background

Current state-of-the-art electronic device processing trends are increasingly moving towards thin film devices, flexible electronics, and sophisticated three-dimensional integration schemes, all of which require device layers to be transferred from a growth substrate of one desired property (e.g., a desired lattice parameter) to an alternate substrate with other desired qualities (e.g., mechanical flexibility).

Additional Technologies by these Inventors

• Fabrication of Gallium Nitride Substrate

Tech ID/UC Case

21607/2008-550-0

Related Cases

2008-550-0

國家/地區

美國