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Electrically Pumped UV Laser Diodes and UV LEDs

詳細技術說明

Gallium Nitride (GaN) LEDs and laser diodes are currently in use for many applications, but these suffer from several drawbacks. GaN laser diodes emit from the edge, not the surface, which requires bulky structures and advanced engineering to align them in useful orientations.   University of California researchers have developed novel UV ZnO diode lasers on Si that overcomes many of the shortcomings of GaN devices.    ·         UC has developed electrically pumped surface-emitting UV ZnO diode lasers with high output power at 380 nm and low threshold current. ·         UC has developed blue and UV LEDs that can operate at room temperature and very low lasing threshold current density of 10 A/cm2. ·         The new UC devices are made from readily produced materials compatible with current manufacturing techniques ·         Currently UC is working to tune these new materials for UV emission around 280 nm and for high powered green (around 520 nm) laser diodes This figure shows the far-field pattern UC’s laser.   This figure shows the output spectra of UC’s lasers diode at various currents. Note the strong and clean emission in the upper UV wavelengths, centered at 380 nm.     For more information, please contact Eric Tonui at the UC Riverside Office of Technology Commercialization at eric.tonui@ucr.edu  or 951 827 4967.   UC Case Reference Number 2008-670

*Abstract

None

*IP Issue Date

Nov 6, 2012

*Principal Investigation

Name: Sheng Chu

Department:

Name: Jianlin Liu

Department:

附加資料

Patent Number: US8306083B2
Application Number: US2009570695A
Inventor: Liu, Jianlin | Chu, Sheng
Priority Date: 30 Sep 2008
Priority Number: US8306083B2
Application Date: 30 Sep 2009
Publication Date: 6 Nov 2012
IPC Current: H01S000500
US Class: 37204501
Assignee Applicant: The Regents of the University of California
Title: High performance ZnO-based laser diodes
Usefulness: High performance ZnO-based laser diodes
Summary: Zinc oxide diode laser i.e. electrically pumped, zinc oxide UV diode laser for solid-state lighting application, photonic application, information processing application and biology application. Can also be used as a zinc oxide LED.
Novelty: Zinc oxide diode laser i.e. electrically pumped, zinc oxide UV diode laser for e.g. photonic application, has n-type zinc oxide layer and zinc oxide-based quantum well structure that possess columnar configuration

主要類別

光學

細分類別

激光

申請號碼

8306083

其他

Tech ID/UC Case

19570/2008-670-2

Related Cases

2008-670-2

國家/地區

美國