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Organic Ir-detecting Strain Gauge

技術優勢: Detects infrared radiationOperates at ambient temperatureScales from a single MEMS-class device to a monolithic large format 2D array

技術應用: Based on its sensitivity to particular IR bands, this MEMS strain gauge is well-suited to the detection of mammals (e.g. humans) and also forest fires. Applications include pedestrian-vehicle safety systems, forestry, disease diagnosis (e.g. SARS, cancer), medical thermography, night vision, and astronomy.

*Abstract: The field of infrared detection is well established with many applications and associated design variations. IR sensors requiring high sensitivity typically need to be cooled to ultra low temperatures -- adding to their complexity and consequently making them more costly or unsuitable for ambient temperature applications.

To address this limitation, researchers at UC Berkeley, using a biomimetic approach, have developed a new type of IR detector that combines a modified strain gauge with an organic material for IR transduction. Infrared radiation incident on the organic material modulates a displacement of the material in order to detect the presence and intensity of IR radiation. This innovative design doesn't require cooling, and is sensitive to 9 and 3 ?m -- wavelengths that are emitted by mammals and forest fires, respectively.

*Principal Investigation: Name: Thomas ("Trey") Cauley
Department:

Name: Jim Cheng
Department:

Name: Michael Mueller
Department:

Name: Albert Pisano
Department:

附加資料: Patent Number: US7547886B2
Application Number: US2006483142A
Inventor: Mueller, Michael | Cheng, Jim | Pisano, Albert | Cauley, III, Thomas H.
Priority Date: 7 Jul 2005
Priority Number: US7547886B2
Application Date: 7 Jul 2006
Publication Date: 16 Jun 2009
IPC Current: G01J000500
US Class: 2503381
Assignee Applicant: The Regents of the University of California
Title: Infrared sensor systems and devices
Usefulness: Infrared sensor systems and devices
Summary: Used in a mechanical strain gauge and a microelectromechanical system (MEMS) based device, for sensing a change in strain induced by the presence of infrared radiation, that is utilized in medical, military, industrial and commercial applications. Can also be used for a thin-film transistor in which the photomechanical stretching strains the transistor channel and alters the transistor current.
Novelty: Strain sensor for sensing change in strain induced by infrared radiation, has strain-sensitive device including infrared sensing material, where absorption of infrared radiation produces strain in strain- sensitive device

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