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Photoconductive Nanowires

技術應用: optoelectronic switchchemical/biological sensorsingle photon detection

*Abstract: Researchers at the University of California, Berkeley have developed highly sensitive ultraviolet light sensors based on zinc oxide nanowires. Upon exposure to light of wavelength below 400 nm, the electrical resistivity of the semiconducting nanowires decreases by 4-5 orders of magnitude.

?Nanowire UV photodetector and optical switches?, H. Kind, H. Yan, M. Law, B. Messer, P. Yang, Adv. Mater. 14, 158, 2002

*Principal Investigation: Name: Johannes Kind
Department:

Name: Matthew Law
Department:

Name: BENJAMIN MESSER
Department:

Name: Haoquan Yan
Department:

Name: Peidong Yang
Department:

附加資料: Patent Number: US7239769B2
Application Number: US200426576A
Inventor: Yang, Peidong | Kind, Hannes | Yan, Haoquan | Law, Matthew | Messer, Benjamin
Priority Date: 27 Dec 2001
Priority Number: US7239769B2
Application Date: 30 Dec 2004
Publication Date: 3 Jul 2007
IPC Current: G02B000626 | G02B000635 | G11C001302 | H01H000102 | H01L005130
US Class: 385016 | 385008 | 385012
Assignee Applicant: The Regents of the University of California,Berkeley
Title: Nanowire optoelectric switching device and method
Usefulness: Nanowire optoelectric switching device and method
Summary: As e.g. a switch, a sensor, a chemical sensor, photo-detector, opto-electronic device, micro-electromechanical system (MEMS), micro-optoelectromechanical system (MOEMS), a humidity sensor, or an oxygen sensor (claimed).
Novelty: Nanowire switching device, e.g. sensor, comprises nanowire structure having first and second conductivity values while active surface is subjected to respective first and second intensities of electro-magnetic radiation illumination

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