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Semiconducting Group III-Nitride Nanowires for Photochemical Splitting of Water to Generate

詳細技術說明: The intellectual property relates to systems and processes for the photocatalytic spitting of water and generation of H2. The system is characterized as GaN surfaces grown on Si(111) substrate by molecular beam epitaxy. These incorporate Rh/Cr2O3 core-shell nanostructures photodeposited as co-catalysts. These III-nitride hetero-structures are viable photocatalytic systems for achieving stable water splitting and generation of Hydrogen. The realization of wafer-level photocatalytic water splitting, compared to conventional powder based approaches, enables low cost, high performance, and compact hydrogen production systems not previously attainable.

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