Real-Time, In-Situ, Monitor for Metrology of Nanostructures
- 技術優勢
- Real-timeanalysis of the evolution of nanostructuresIncreased control over nanostructure size,shape, growth and processCorrectand maintain optimum nanostructure growth conditionsApplicationsinclude industry and researchers who are fabricating periodic arrays ofnanowire, nanowall, and other nanostructures, semiconductor, and solid-statelighting applications
- 詳細技術說明
- This invention describes a new metrology tool that would have application in the monitoring of nanostructure fabrication.
- *Abstract
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University of New Mexico researchers propose to adaptexisting optical scatterometry algorithms and equipment to permit an in-situ,real-time analysis of the evolution of nanostructure size and shape during theepitaxial growth or etching process.
- *Background
- There are numerous examples of in-situ monitors designedto measure epitaxial growth or etch processing in semiconductor process equipment. However, the metrology of nanostructures iscurrently performed after the growth or etching process has been completed.There is a present market need for a monitoring technology designed forreal-time metrology of evolving nanostructures during their epitaxy or etchprocess in order to better control the size and shape of the nanostructure, tocorrect and maintain the optimum growth conditions, and to abort expensivegrowth runs if control of the process is lost.
- 國家/地區
- 美國
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