New Method for Producing Low Contact Resistivity Paladium/Germanium (PdGe) Contacts on Group III-V Materials
- 詳細技術說明
- This technology offers a new method for producing low-resistance electrical contacts on Group III-V materials used in electrical and optical devices.
- *Abstract
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Group III-V semiconductor devices have many advantages over silicon-based semiconductors, including speed and the ability to produce optical emissions. For this reason, they are being widely used in optoelectric devices.
This technology offers a new method for producing low-resistance electrical contacts on Group III-V materials used in electrical and optical devices. The new method produces the lowest known resistivity PdGe contacts on gallium arsenide (GaAs). It uses a hydrogen ambient atmosphere to directly form PdGe contacts, resulting in extremely low resistivity and a simplified manufacturing process due to its increased etch resistance.
DESCRIPTION/DETAILS
This technology offers a new method for producing low-resistance electrical contacts on Group III-V semiconductor materials. The new method produces PdGe contacts on GaAs that have the lowest known resistivity. It also simplifies the manufacturing process via increased etch resistance of the contacts.
How It Works
Low resistivity PdGe contacts with high etch resistance are produced when the alloying operation is performed in a high-concentration hydrogen ambient. The alloying step is performed in an enclosed chamber using a high-purity hydrogen source at alloy temperatures exceeding approximately 300 C. A device is made by alloying a contact for a short time in hydrogen, followed by etching and completion of the hydrogen alloying step to allow the reaction to reach equilibrium.The 15-minute hydrogen ambient alloying step at 300 C produces the lowest reported specific contact resistivity (pc<1*10-7W-cm2) of any alloy methods (in nitrogen or hydrogen ambients) used for PdGe on GaAs. The longer alloy times used in this hydrogen method suggest that hydrogen slows the PdGe reduction reaction, a property that results in a more durable contact.When conventional alloying processes are used with PdGe contacts, the resulting contacts are very reactive. They are easily etched by many of the oxidizing agents and acids that are typically used in conventional manufacturing environments. Use of a high-concentration hydrogen ambient makes the contacts stronger and more chemically resistant to wet and dry etching, thereby preventing the contacts from being removed during the etch process. Because of this increased durability, the entire process is amenable to easier manufacturing.
Why It Is Better
Lower contact resistivities reduce power consumption in fabricated integrated circuits and decrease heat generation. Reliable contacts also improve device operation and lengthen life span. This method produces the lowest known resistance of any alloy method used for PdGe on GaAs.The manufacturing process is simplified because the method creates a more durable contact that is resistant to etching. This method requires no extra steps in the device fabrication sequence to protect the PdGe contacts, requiring only an alloying station that can produce a hydrogen ambient.
APPLICATIONS
- Heterojunction bipolar transistors (HBTs)
- Light emitting diodes (LEDs)
- Field effect transistors (FETs)
BENEFITS
Using this method to produce PdGe contacts on Group III-V layers lowers the etch reactivity of the contacts, lowers resistivity, simplifies the manufacturing process, and improves the overall PdGe Group III-V direct interface.
- Produces the lowest known resistance of any alloy method used for PdGe contacts on GaAs
- Creates a more durable contact that is resistant to etching
- Reduces power consumption
- Decreases heat generation
- Improves operation of the device
- Lengthens life span of the device (potentially)
For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.
- 國家/地區
- 美國
