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Tunnel Coupling Layer for Efficient Quantum Dot Lasers

詳細技術說明

This technology uses thin quantum well coupling layers to enhance transport of electron-hole pairs between quantum dots, making QD lasers more efficient, and avoiding the limitations of existing QD technology.

*Abstract

A major problem with quantum dot (QD) lasers is the stochastic nature of QD structures, the lack of uniformity, the insufficient QD density, and the poor QD-to-QD coupling. This technology uses thin quantum well coupling layers to enhance transport of electron-hole pairs between quantum dots, making QD lasers more efficient, and avoiding the limitations of existing QD technology. 

DESCRIPTION/DETAILS 

A major problem with QD lasers is the stochastic nature of QD structures, the lack of uniformity, the insufficient QD density, and the poor QD-to-QD coupling. A solution to the problem is to couple, via a thin barrier, the sheet of QDs to a quantum well (QW) layer. Electron-hole transport in the QW layer can rearrange the electron-hole pairs in the plane and provide the dot-to-dot coupling. That is, an electron tunnels from the QD to the QW layer, transports in the plane in the QW layer, and re-tunnels back into another QD. 

This technology uses thin quantum well coupling layers to enhance transport of electron-hole pairs between quantum dots, making QD lasers more efficient. A semiconductor device using this technology would be layered as follows: 

• 200-nm cladding layer 

• 50-nm waveguide layer 
• 15 mono-layers of quantum dots 
• 1-10-nm coupling barrier layer 
• 2-10-nm quantum well layer 
• 1-10-nm coupling barrier layer 
• 15 mono-layers of quantum dots 
• 50-nm waveguide layer
• 200-nm cladding layer 

The technology has been demonstrated in the visible red wavelength using indium phosphide (InP) quantum dots, indium aluminum gallium phosphide (InAlGaP) coupling barrier layers, and indium gallium phosphide (InGaP) quantum well layers. 

BENEFITS

By creating a uniform, dense layer of quantum dots, this technology enhances transport of electron-hole pairs into and between quantum dots for greater efficiency of edge emitting lasers (EELs), and other semiconductor devices. 

• Increased device performance efficiency 
• Increased emission brightness 
• Increased emission selectivity, which decreases spectral smearing

For more information about this technology, please contact the University of Illinois at Urbana-Champaign Office of Technology Management at otm@illinois.edu.

*IP Issue Date

None

*IP Type

Utility

國家

United States

申請號碼

6773949

國家/地區

美國