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Selenization of CIS Nanoparticles

總結
Researchers at Purdue University have developed a photovoltaic printing technology utilizing CuInS2 nanocrystal inks, allowing for the creation of CIGS at the molecular level. This is beneficial because smaller particles will lead to a more densely packed nanoparticle film, and it allows for the fabrication of the film with solely the CuInS2 nanoparticle or a mixture of the CuInS2 nanoparticle with other CIGS materials, such as CuIn(Sy,Se1-y)2, CuGaS2, CuGa(Sy,Se1-y)2, Cu(InGa1-x)S2, and Cu(InxGa1-x)(Sy,Se1-y)2. This process is also safe, less expensive, and has a high production yield.
技術優勢
SafeAllows for creation of CIGS with the desired composition Inexpensive High production yields
技術應用
Solar industrySolar panel manufacturers
詳細技術說明
Rakesh AgrawalPurdue Chemical EngineeringSolar Energy Research GroupLiquid Fuels Research GroupSeparations Research Group
*Abstract

*Background
There are currently various challenges in the selenization of CuInS2 (CIS) films. There tends to be delamination of the film after selenization, where the film peels off from the substrates. Another method requires a high-temperature hydrogen reduction step to reduce the oxides, where substantial amounts of energy and time are necessary. This step is also potentially explosive and may require the use of highly toxic H2Se gas. Further, expensive, high-end equipment is needed for safety concerns when the gas is at high temperatures. The most challenging problem in previous art is the lack of control of the film composition. Because the electric properties of CIS depend strongly on its composition, there is a need where composition of the film can be controlled at the nanometer scale.
*IP Issue Date
May 13, 2014
*IP Type
Other Patent
*Web Links
Purdue Office of Technology CommercializationPurdueInnovation and EntrepreneurshipRakesh AgrawalPurdue Chemical EngineeringSolar Energy Research GroupLiquid Fuels Research GroupSeparations Research Group
國家
United States
申請號碼
8,722,447
國家/地區
美國

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