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Bi-Stable Nanoswitch

技術優勢

Value PropositionThe nanoswitch:ΓÇóIs simpler and much more cost effective as compared to conventional switchesΓÇóEmploys one or more nanotubes (such as SWNT) as the actuation element as compared to patterned sheets of nanoelements used in other devicesΓÇóAchieves a 5-fold reduction in voltage as compared to other devicesΓÇóDoesnΓÇÖt require any restoring electrode as opposed to other devicesΓÇóWould be commercially useful for the following applications:ΓÇóIncorporation into existing CMOS processes to fabricate non-volatile memory devicesΓÇóProduction of sensors such as radiation detectors, chemical sensors, thermal sensors, and biological sensorsΓÇóFabrication of latches, flip-flops, registers, and other components used in microprocessor chips for computers

詳細技術說明

None

*Abstract

In current devices, SWNT sheets are used as actuation elements, wherein high switch voltage is required. Further, more fabrication and processing steps are carried out for device designing, which leads to higher production cost. Such devices have less storage density due to absence of nanoscale dimensions. Other prior art systems use SWNTs in forms of assembled nanowires as memory devices, which are difficult to produce and commercialize due to associated chemical assembly problems. This novel bistable nanoswitch overcomes most of these prior art limitations, providing a high density and a low power non-volatile storage system.

*Principal Investigation

Name: George Adams

Department:

Name: Ahmed Busnaina

Department:

Name: Taehoon Kim

Department:

Name: Nicol McGruer

Department:

Name: Peter Ryan

Department:

Name: Sivasubramanian Somu

Department:

Name: Xugang Xiong

Department:

國家/地區

美國