Carbon nanowires in advanced electronics
Allows writing of highly conductive nanowire Enable electronic device prototyping, repair and organic electronics
Researchers at the University have shown that it is possible to use a carbon C60 fullerene derivative to write highly conductive carbon nanowires using electron beam lithography. The process is analogous to forming a pattern in fullerene films, however, in this technology the pattern is the active device itself rather than being used as a mask to further process a substrate. The material formed by lithography has a conductivity of the same order of magnitude as amorphous glassy carbon.This has applications in electronic device prototyping, device repair (for instance equivalent to EBID or FEBID), and organic electronics. The material and process is ideal for forming organic (carbon based) electrical interconnects.
Inventor: Crosby, Alfred J. | Chan, Edwin P.
Priority Number: US7858156B2
IPC Current: B05D000300 | C08J000716 | C08J000718 | G03F000700
US Class: 427532 | 427533 | 427535 | 427539 | 4302811 | 522079 | 522109 | 522110
Assignee Applicant: The University of Massachusetts,Boston
Title: Surface buckling method and articles formed thereby
Usefulness: Surface buckling method and articles formed thereby
Summary: Formation of buckled surface useful in forming article, i.e. a microlens, a microlens array for a compound eye, a compound microlens, a diffraction grating, a photonic crystal, a pressure-sensitive adhesive, a mechanical strain sensor, a microfluidic device, and a cell culture container (claimed).
Novelty: Formation of buckled surface for, e.g. microlens, involves modifying surface of elastomeric layer to form superlayer, swelling elastomeric layer with polymerizable monomer, and polymerizing monomer to stabilize buckling of superlayer
生物醫學
DNA /基因工程
美國
