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Fabrication of Piezoelectric Single Crystalline Thin Layer on Silicon Wafer

總結: The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 mum.

附加資料: Patent Number: US8536665B2
Application Number: US2007892313A
Inventor: Peng, Jue | Chao, Chen | Dai, Ji-yan | Chan, Helen L. W.
Priority Date: 22 Aug 2007
Priority Number: US8536665B2
Application Date: 22 Aug 2007
Publication Date: 17 Sep 2013
IPC Current: H01L002984 | H01L004122
US Class: 257416 | 257E27006 | 438050
Assignee Applicant: The Hong Kong Polytechnic University
Title: Fabrication of piezoelectric single crystalline thin layer on silicon wafer
Usefulness: Fabrication of piezoelectric single crystalline thin layer on silicon wafer
Summary: Formation of piezoelectric-on-silicon wafer used for piezoelectric micro-electromechanical devices (claimed) such as micro cantilevers, acoustic sensors, ultrasonic transducer, resonators and pressure sensors, ophthalmological imaging equipment, dermatological imaging equipment, intravascular imaging equipment, high frequency ultrasonic transducers (HFUT) and piezoelectric micromachined ultrasonic transducers.
Novelty: Fabrication of piezoelectric-on-silicon wafer for resonator, involves bonding silicon wafer and piezoelectric wafer followed by thinning the wafer by wet chemical thinning, grinding and polishing, electrode deposition and wet etching

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