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Ultraviolet Detector

總結: An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN buffer layer; a GaN epitaxial layer deposited on the intermediate temperature GaN buffer layer; a Schottky junction formed on top of the GaN epitaxial layer; and a plurality of ohmic contacts also formed on top of the GaN epitaxial layer, wherein, the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer together form a double buffer layer structure so as to improve the reliability and radiation hardness of the UV detector; and wherein the high temperature AlN buffer layer and the intermediate temperature GaN buffer layer are formed by RF-plasma enhanced MBE growth technology

附加資料: Inventor: KENNEDY, Ian, M. | HAN, Jin-Hee | LAKSHMANA, Sudheendra
Priority Number: WO2013103997A1
IPC Current: G01J0003443 | G01N002164
Assignee Applicant: The Regents of the University of California
Title: ULTRASENSITIVE ASSAYS WITH A NANOPARTICLE-BASED PHOTONIC CRYSTAL | DOSAGES ULTRASENSIBLES AVEC UN CRISTAL PHOTONIQUE À BASE DE NANOPARTICULES
Usefulness: ULTRASENSITIVE ASSAYS WITH A NANOPARTICLE-BASED PHOTONIC CRYSTAL | DOSAGES ULTRASENSIBLES AVEC UN CRISTAL PHOTONIQUE À BASE DE NANOPARTICULES
Summary: The nanoarray is useful for photonic crystal-immunoassay or ultra-sensitive assay.
Novelty: Nanoparticle-based photonic crystal array for photonic crystal-immunoassay or ultra-sensitive assay, comprises first substrate, second substrate deposited on first substrate, and superstate disposed on second substrate comprising wells

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