Optical Waveguide Employing Modified Gallium Arsenide
In an optical waveguide fabrication process, medium weight, relatively stable ions, such as oxygen ions, are implanted, preferably in a multiple-step, multiple-energy level process, into GaAs, InP or other like III-V materials and heterostructures and then annealed by radiant heat, in order to produce a structure with an elevated index of refraction without restriction on the carrier concentration or resistivity of the stock wafer by the presumed generation of stable crystalline defects in the implanted region. The ions used for implantation should not generate free carriers once implanted.
94/ENG/003 Inventor: Professor K T CHAN, Department of Electronic Engineering Patent Status: US Patent no. 5,491,768
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