Quantum Dot Functionalized GaN Surfaces for LIght-Emitting Diodes
- 详细技术说明
- Application No.: 15/548,682
- *Abstract
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In one aspect, light emitting devices are described herein. In some embodiments, a light emitting device described herein comprises an inorganic semiconductor substrate and a layer of quantum dots (QDs) covalently bonded to the inorganic semiconductor substrate. Such a device may further comprise an electrode and an overlayer positioned between the electrode and the layer of QDs. Moreover, the overlayer can be immediately adjacent to and in contact with the layer of QDs. Further, in some cases, the layer of QDs is a close-packed layer of QDs. Additionally, the light emitting device can be a green-emitting light emitting diode (LED) or an amber-emitting LED.This invention relates to electroluminescent devices and, in particular, to quantum dot-based light emitting diodes (QD-LEDs).
This invention relates to electroluminescent devices and, in particular, to quantum dot-based light emitting diodes (QD-LEDs).
- 国家/地区
- 美国
