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Spatial conductivity control through materials design/integration and system engineering of group III-nitrides

详细技术说明

Application No.: 14/759,478In the present Incoherent Type-III (hereinafter referred to as “IT3”) junction, equilibrium is reached when the two sides are aligned. Therefore, the junction is at zero-voltage, allowing operation as a rectifying junction at a very low voltage. Whereas the PN-junction has a build-in voltage determined by doping. If a PN-junction needs to be operated as a rectifying device, a minimum voltage is needed determined by the doping concentration which determines the power level of rectification. All of that is relaxed in the presently-disclosed IT3-Junction.Additionally, high conducting regions are mostly used as in-between the metallic wires and individual devices to avoid the formation of Schottky barriers. IT3-junction serves as connections to devices, avoiding the formation of Schottky barriers.The high level of conducting carriers can be used to fill in the range of operation in between metallic and doped semiconductors. Embodiments of this disclosure are provided below in more detail.

*Abstract

A semiconductor junction may include a first semiconductor material and a second material. The first and the second semiconductor materials are extrinsically undoped. At least a portion of a valence band of the second material has a higher energy level than at least a portion of the conduction band of the first semiconductor material (type-III band alignment). A flow of a majority of free carriers across the semiconductor junction is diffusive. A region of generation and/or recombination of a plurality of free carriers is confined to a two-dimensional surface of the second material, and at the interface of the first semiconductor material and the second material.

国家/地区

美国